KINETICS OF INTERSTITIAL SUPERSATURATION DURING OXIDATION OF SILICON

被引：45

作者：

HU, SM

机构：

来源：

关键词：

D O I：

10.1063/1.94384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：449 / 451

页数：3

共 33 条

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MOSKOWITZ, I .

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[3]

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[4]

ANTONIADIS DA, 1978, J ELECTROCHEM SOC, V125, P814

[5]

CLAEYS C, 1981, SEMICONDUCTOR SILICO, P730

[6]

CLAEYS CL, 1977, SEMICONDUCTOR SILICO, P773

[7]

CORBETT JW, 1966, ELECTRON RAD DAMAGE

FAIR, RB .

[9] EFFECT OF OXIDATION ON THE DIFFUSION OF PHOSPHORUS IN SILICON [J].

FRANCIS, R ;

DOBSON, PS .

[10]

GOESELE U, 1981, DEFECTS SEMICONDUCTO, P55