KINETICS OF SELF-INTERSTITIALS GENERATED AT THE SI/SIO2 INTERFACE

被引：94

作者：

TANIGUCHI, K ^{[1
]}

ANTONIADIS, DA ^{[1
]}

MATSUSHITA, Y ^{[1
]}

机构：

[1] TOSHIBA CORP,SEMICOND DEVICE ENGN LAB,KAWASAKI 210,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 11期

关键词：

D O I：

10.1063/1.93814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：961 / 963

页数：3

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