STACKING-FAULT ANNIHILATION DEPENDENCE ON SURFACE ORIENTATION IN SILICON

被引:9
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HAYAFUJI, Y
KAWADO, S
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10.1063/1.330528
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O59 [应用物理学];
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页码:1215 / 1217
页数:3
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[1]   BONDING AND STRUCTURE OF EPITAXIAL BICRYSTALS .2. THIN FILMS [J].
BALL, CAB .
PHYSICA STATUS SOLIDI, 1970, 42 (01) :357-&
[2]  
CLAEYS CL, 1977, SEMICONDUCTOR SILICO, P773
[3]   OXIDATION STACKING-FAULTS IN EPITAXIAL SILICON-CRYSTALS [J].
CONTI, M ;
CORDA, G ;
MATTEUCCI, R ;
GHEZZI, C .
JOURNAL OF MATERIALS SCIENCE, 1975, 10 (04) :705-713
[4]  
FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1054
[5]   CRITICAL MICROSTRUCTURE FOR ION-IMPLANTATION GETTERING EFFECTS IN SILICON [J].
GEIPEL, HJ ;
TICE, WK .
APPLIED PHYSICS LETTERS, 1977, 30 (07) :325-327
[6]   ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON [J].
HU, SM .
APPLIED PHYSICS LETTERS, 1975, 27 (04) :165-167
[7]  
JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401
[8]   X-RAY STUDY OF SMALL DISLOCATION LOOPS IN THERMALLY OXIDIZED SILICON [J].
KAWADO, S ;
MARUYAMA, T .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1972, 5 (JUL1) :281-&
[10]   STACKING FAULTS IN ANNEALED SILICON SURFACES [J].
LAWRENCE, JE .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :360-&