EFFECT OF BACK-SIDE OXIDATION ON B AND P DIFFUSION IN SI DIRECTLY MASKED WITH SI3N4 FILMS

被引：35

作者：

MIZUO, S

HIGUCHI, H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 10期

关键词：

D O I：

10.1149/1.2123496

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2292 / 2295

页数：4

共 13 条

[1] ORIENTATION DEPENDENCE OF DIFFUSION OF BORON IN SILICON [J].

ALLEN, WG ;

ANAND, KV .

SOLID-STATE ELECTRONICS, 1971, 14 (05) :397-&

[2] HIGH-TEMPERATURE DIFFUSION OF PHOSPHORUS AND BORON IN SILICON VIA VACANCIES OR VIA SELF-INTERSTITIALS [J].

GOSELE, U ;

STRUNK, H .

APPLIED PHYSICS, 1979, 20 (04) :265-273

[3] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1567-1573

[4] LATERAL EFFECT OF OXIDATION ON BORON-DIFFUSION IN (100) SILICON [J].

LIN, AM ;

DUTTON, RW ;

ANTONIADIS, DA .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :799-801

[5] OXIDATION-RATE DEPENDENCE OF PHOSPHORUS DIFFUSIVITY IN SILICON [J].

MASETTI, G ;

SOLMI, S ;

SONCINI, G .

PHILOSOPHICAL MAGAZINE, 1976, 33 (04) :613-621

[6] THE RANGE OF DIFFUSION ENHANCEMENT OF B AND P IN SI DURING THERMAL-OXIDATION [J].

MIZUO, S ;

HIGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (02) :272-275

[7] SUPPRESSION BY PRE-DIFFUSION ANNEALING OF ANOMALOUS DIFFUSION OF B AND P IN SI DIRECTLY MASKED WITH SI3N4 FILMS [J].

MIZUO, S ;

HIGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) :1749-1750

[8] ANOMALOUS PHOSPHORUS DIFFUSION IN SI DIRECTLY MASKED WITH SI3N4 FILMS [J].

MIZUO, S ;

HIGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :791-792

[9] ANOMALOUS DIFFUSION OF B AND P IN SI DIRECTLY MASKED WITH SI3N4 [J].

MIZUO, S ;

HIGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (02) :281-286

[10] RETARDATION OF SB DIFFUSION IN SI DURING THERMAL-OXIDATION [J].

MIZUO, S ;

HIGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :739-744

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