1D SIMULATION OF OXIDATION-ENHANCED AND OXIDATION-RETARDED DIFFUSION IN SILICON AND VALIDITY OF THE PHYSICAL MODEL - TRANSITION TO THE 2D CASE

被引：19

作者：

SCHEID, E

CHENEVIER, P

机构：

[1] CNRS, Grenoble, Fr, CNRS, Grenoble, Fr

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 93卷 / 02期

关键词：

D O I：

10.1002/pssa.2210930216

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：523 / 533

页数：11

共 39 条

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