Carbon nanotubes for high-performance electronics - Progress and prospect

被引:272
作者
Appenzeller, J. [1 ]
机构
[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
carbon nanotube; nanoelectronics; one-dimensional transport; tunneling device;
D O I
10.1109/JPROC.2007.911051
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
I Carbon nanotube devices offer intrinsic advantages for high-performance logic device applications. The ultrasmall body of a carbon nanotube-the tube diameter-is the key feature that should allow aggressive channel length scaling, while the intrinsic transport properties of the nanotube ensure at the same time high on-currents. in addition, the narrowness of the tube is critical to implementation of novel device concepts like the tunneling transistor. By understanding the unique capabilities of carbon nanotubes and using them in unconventional designs, novel nanoelectronic applications may become feasible. However, much better control of materials quality must be obtained, and new fabrication processes must be developed before such applications can be realized.
引用
收藏
页码:201 / 211
页数:11
相关论文
共 65 条
[41]   Field-effect transistors assembled from functionalized carbon nanotubes [J].
Klinke, Christian ;
Hannon, James B. ;
Afzali, Ali ;
Avouris, Phaedon .
NANO LETTERS, 2006, 6 (05) :906-910
[42]  
Koswatta SO, 2005, INT EL DEVICES MEET, P525
[43]   Surface conductance induced dielectrophoresis of semiconducting single-walled carbon nanotubes [J].
Krupke, R ;
Hennrich, F ;
Kappes, MM ;
Löhneysen, HV .
NANO LETTERS, 2004, 4 (08) :1395-1399
[44]   Role of Fermi-level pinning in nanotube Schottky diodes [J].
Léonard, F ;
Tersoff, J .
PHYSICAL REVIEW LETTERS, 2000, 84 (20) :4693-4696
[45]   Carbon nanotube transistor operation at 2.6 GHz [J].
Li, SD ;
Yu, Z ;
Yen, SF ;
Tang, WC ;
Burke, PJ .
NANO LETTERS, 2004, 4 (04) :753-756
[46]   Preferential growth of semiconducting single-walled carbon nanotubes by a plasma enhanced CVD method [J].
Li, YM ;
Mann, D ;
Rolandi, M ;
Kim, W ;
Ural, A ;
Hung, S ;
Javey, A ;
Cao, J ;
Wang, DW ;
Yenilmez, E ;
Wang, Q ;
Gibbons, JF ;
Nishi, Y ;
Dai, HJ .
NANO LETTERS, 2004, 4 (02) :317-321
[47]   High-performance dual-gate carbon nanotube FETs with 40-nm gate length [J].
Lin, YM ;
Appenzeller, J ;
Chen, ZH ;
Chen, ZG ;
Cheng, HM ;
Avouris, P .
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (11) :823-825
[48]   High-performance carbon nanotube field-effect transistor with tunable Polarities [J].
Lin, YM ;
Appenzeller, J ;
Knoch, J ;
Avouris, P .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (05) :481-489
[49]  
LIN YM, 2004, P 62 DEV RES C 2004, P133
[50]   Controlled deposition of individual single-walled carbon nanotubes on chemically functionalized templates [J].
Liu, J ;
Casavant, MJ ;
Cox, M ;
Walters, DA ;
Boul, P ;
Lu, W ;
Rimberg, AJ ;
Smith, KA ;
Colbert, DT ;
Smalley, RE .
CHEMICAL PHYSICS LETTERS, 1999, 303 (1-2) :125-129