Air stability of p-channel organic field-effect transistors based on oligo-p-phenylenevinylene derivatives

被引：17

作者：

Ashimine, Tomoyuki ^{[1
]}

Yasuda, Takeshi ^{[1
,2
,3
]}

Saito, Masatoshi ^{[4
]}

Nakamura, Hiroaki ^{[4
]}

Tsutsui, Tetsuo ^{[1
,2
]}

机构：

[1] Kyushu Univ, Grad Sch Engn Sci, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan

[2] Kyushu Univ, Inst Mat Chem & Engn, Fukuoka 8168580, Japan

[3] Japan Sci & Technol Agcy, PRESTO, Tokyo 1020075, Japan

[4] Idemitsu Kosan Co Ltd, Cent Res Labs, Sodegaura, Chiba 2990293, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 03期

关键词：

organic field-effect transistor; air stability; oligo-p-phenylenevinylene; organic semiconductor; highest occupied molecular orbital;

D O I：

10.1143/JJAP.47.1760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated that the stability of organic field-effect transistors (OFETs) based on two oligo-p-phenylenevinylenes, 1,4-bis(4-methylstyryl)benzene (CH3-OPV) and 1,4-bis(4-dimethylaminostyryl)benzene [(CH3)(2)N-OPV], which is a new organic semiconductor for OFETs. The OFET fabricated using CH3-OPV with a highest occupied molecular orbital (HOMO) energy level of -5.55 eV shows good ambient stability even after storage in air for one year. On the other hand, the field-effect mobilities of organic semiconductors including (CH3)(2)N-OPV with the HOMO energy level ranging from -4.94 to -5.20 eV have decreased with time. The stability of CH3-OPV is suggested to be due to the relatively low HOMO energy level.

引用

页码：1760 / 1762

页数：3

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