Heteroepitaxy of electrodeposited CdSe on (100) InP and GaAs single crystals

被引：8

作者：

Beaunier, L

Cachet, H

Cortes, R

Froment, M

Etcheberry, A

机构：

[1] Univ Paris 06, UPR CNRS 15 Conventionnee, F-75252 Paris 05, France

[2] Univ Versailles, Inst Lavoisier, IREM, UMR CNRS C0173, F-78035 Versailles, France

来源：

THIN SOLID FILMS | 2001年 / 387卷 / 1-2期

关键词：

electrodeposition; epitaxial growth; chemical composition;

D O I：

10.1016/S0040-6090(00)01843-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial CdSe films have been electrodeposited on the (100) face of InP and GaAs single crystals. The quality of the epitaxy and chemical composition of CdSe films have been investigated by reflection high-energy electron diffraction, X-ray diffraction and XPS measurements. A good stability of the InP and GaAs surfaces, in presence of the deposition electrolytes, was found. The choice of the deposition parameters is crucial for the growth of epitaxial and stoichiometric layers. (C) 2001 Elsevier Science B.V. All rights reserved.

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页码：108 / 110

页数：3

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