Molecular beam epitaxy of wurtzite CdSe on GaAs{111} substrates

被引：8

作者：

Ohishi, M ^{[1
]}

Yoneta, M ^{[1
]}

Saito, H ^{[1
]}

Sawada, H ^{[1
]}

Mori, S ^{[1
]}

机构：

[1] Okayama Univ Sci, Dept Appl Phys, Okayama 700, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

cadmium selenide (CdSe); molecular beam epitaxy (MBE); atomic layer epitaxy (ALE); Se sublimation; polar surface;

D O I：

10.1016/S0022-0248(98)80293-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Wurtzite-CdSe epitaxial layers on GaAs(1 1 1)A and B substrates were grown by molecular beam epitaxy using elemental Cd and Se beams. A distinct RHEED oscillation of a specular spot intensity was observed during ALE growth of CdSe on GaAs(1 1 1)B, but the oscillation on GaAs(1 1 1)A was poor. A GaAs(1 1 1)B substrate is superior to GaAs(1 1 1)A substrate for the layer-by-layer growth of wurtzite CdSe. The activation energy of Se desorption from the GaAs(1 1 1)B surface was determined as 1.2 +/- 0.1 eV by analyzing the temporal specular beam intensity. The crystallographic and luminescence properties are also presented. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：57 / 61

页数：5

共 4 条

[1] METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF CDSE/ZNSE STRAINED-LAYER SINGLE QUANTUM-WELLS AND SUPERLATTICES ON GAAS SUBSTRATES [J].