Preparation of Ba(Ti,Zr)O3 thick films on silicon substrate by screen printing

被引:7
作者
Futakuchi, T
Sakai, Y
Fujita, N
Adachi, M
机构
[1] Toyama Ind Technol Ctr, Toyama 9300866, Japan
[2] Toyama Prefectural Univ, Fac Engn, Dept Elect & Informat, Toyama 9390398, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 9B期
关键词
ferroelectric; piezoelectric; thick film; screen printing; BaTiO3; BaZrO3; TITANATE SINGLE-CRYSTALS; DEPOSITION; CERAMICS; GROWTH;
D O I
10.1143/JJAP.42.5904
中图分类号
O59 [应用物理学];
学科分类号
摘要
BaTi0.975Zr0.025O3 thick films were prepared by a screen-printing method on Pt bottom electrodes using silicon substrates in the firing temperature range from 1330degreesC to 1370degreesC. The high-temperature sintering of Pt bottom electrodes and Ba(Ti,Zr)O-3 thick films was successfully achieved using silicon substrates with a fairly thick oxide layer. The ferroelectric and piezoelectric properties of the thick films were examined. The remanent polarization of the thick films increased with increasing firing temperature. A remanent polarization of 13.8 muC/cm(2) for a Ba(Ti,Zr)O-3 thick film was obtained at a firing temperature of 1370degreesC. The longitudinal piezoelectric constant d(33) calculated from a unipolar signal (10kV/cm, 1 Hz) curve was 610 pC/N for the thick film fired at 1370degreesC.
引用
收藏
页码:5904 / 5907
页数:4
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