Properties of highly (100) oriented Pb(Mg1/3,Nb2/3)O3-PbTiO3 films on LaNiO3 bottom electrodes

被引：15

作者：

Li, Y. W. ^{[1
]}

Hu, Z. G.

Yue, F. Y.

Yang, G. Y.

Shi, W. Z.

Meng, X. J.

Sun, J. L.

Chu, J. H.

机构：

[1] E China Normal Univ, ECNU SITP Joint Lab Image Informat, Shanghai 200241, Peoples R China

[2] E China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China

[3] E China Normal Univ, Dept Phys, Shanghai 200062, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 23期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2822421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The 70%Pb(Mg-1/3,Nb-2/3)O-3-30%PbTiO3 (PMNT) films have been fabricated on LaNiO3 (LNO) coated silicon substrate. The conductive LNO films act as a seed layer for the growth of PMNT films, which depresses the formation of pyrochlore phase and induces the high (100) preferred orientation of perovskite PMNT films. Compared with the PMNT films grown on platinum bottom electrode, the ferroelectric properties of PMNT films grown on LNO are enhanced. The frequency dependence of complex permittivity from PMNT films on LNO is the conjunct result of polarization relaxation and movement of oxygen vacancy, which can be fitted by the function containing Debye and universal dielectric response models, respectively. (c) 2007 American Institute of Physics.

引用

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