Optical design of evanescently coupled, waveguide-fed photodiodes for ultrawide-band applications

被引:25
作者
Giraudet, L
Banfi, F
Demiguel, S
Hervé-Gruyer, G
机构
[1] OPTO, Grp Interet Econ, F-91460 Marcoussis, France
[2] France Telecom, CNET, F-92225 Bagneux, France
关键词
GaInAs; high-speed devices; InP; integrated optoelectronics; microwave devices; optical communications; p-i-n photodiodes; semiconductor waveguides;
D O I
10.1109/68.736412
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Beam propagation method simulation shows that evanescently coupled waveguide/photodiodes can be optimized to have absorption lengths as short as butt-coupled photodiodes. Efficient focalization of optical power in the absorber is achievable by appropriate choice of layers geometry and refractive index. Two AlGaInAs-GaInAs structures have been designed for ultrawide-band operation at 60 and 100 GHz: these devices exhibit internal quantum efficiency as high as 94% and 75%, respectively, at 1.55-mu m wavelength, Such promising performances are suitable for the realization of high-speed high-efficiency integrated photoreceivers with applications to millimeter-wave optical fiber links.
引用
收藏
页码:111 / 113
页数:3
相关论文
共 9 条
[1]   Ultrafast monolithically integrated InP-based photoreceiver: OEIC-design, fabrication, and system application [J].
Bach, HG ;
Umbach, A ;
vanWaasen, S ;
Bertenburg, RM ;
Unterborsch, G .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (02) :418-423
[2]   IMPEDANCE MATCHING FOR ENHANCED WAVEGUIDE PHOTODETECTOR INTEGRATION [J].
DERI, RJ ;
WADA, O .
APPLIED PHYSICS LETTERS, 1989, 55 (26) :2712-2714
[3]   QUENCHING OF RESONANTLY ENHANCED ABSORPTION BY MULTIMODE INTERFERENCE IN VERTICALLY COUPLED WAVE-GUIDE PHOTODETECTORS [J].
DERI, RJ ;
PENNINGS, ECM ;
HAWKINS, RJ .
OPTICS LETTERS, 1992, 17 (09) :667-669
[4]   MONOLITHIC INTEGRATION OF AN INP BASED POLARIZATION DIVERSITY HETERODYNE PHOTORECEIVER WITH ELECTROOPTIC ADJUSTABILITY [J].
GHIRARDI, F ;
BRUNO, A ;
MERSALI, B ;
BRANDON, J ;
GIRAUDET, L ;
SCAVENNEC, A ;
CARENCO, A .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1995, 13 (07) :1536-1549
[5]   110-GHZ, 50-PERCENT-EFFICIENCY MUSHROOM MESA WAVE-GUIDE P-I-N PHOTODIODE FOR A 1.55-MU-M WAVELENGTH [J].
KATO, K ;
KOZEN, A ;
MURAMOTO, Y ;
ITAYA, Y ;
NAGATSUMA, T ;
YAITA, M .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (06) :719-721
[6]  
KATO K, 1993, IEICE T ELECTRON, VE76, P214
[7]   REFRACTIVE-INDEX OF INGAAS/INALAS MULTIQUANTUM-WELL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
NOJIMA, S ;
ASAHI, H .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) :479-483
[8]  
UNTERBORSCH G, 1997, ECOC 97, V2, P25
[9]  
WANLIN G, 1997, ECOC 97, V2, P37