110-GHZ, 50-PERCENT-EFFICIENCY MUSHROOM MESA WAVE-GUIDE P-I-N PHOTODIODE FOR A 1.55-MU-M WAVELENGTH

被引：141

作者：

KATO, K ^{[1
]}

KOZEN, A ^{[1
]}

MURAMOTO, Y ^{[1
]}

ITAYA, Y ^{[1
]}

NAGATSUMA, T ^{[1
]}

YAITA, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 06期

关键词：

D O I：

10.1109/68.300173

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A mushroom-mesa structure is proposed to reduce the CR-time constant which originates from the waveguide photodiode structure. Experimental results at a 1.55-mum wavelength show that the multimode waveguide p-i-n photodiode with mushroom-mess structure has an electrical 3-dB bandwidth of more than 75 GHz in the frequency domain and an electrical 3-dB bandwidth of 110 GHz in the time domain. The external quantum efficiency is 50% or 0.63 A/W, which leads to a record bandwidth-efficiency product of 55 GHz for long wavelength p-i-n photodetectors.

引用

页码：719 / 721

页数：3

共 10 条

[1] ULTRAWIDE-BAND LONG-WAVELENGTH P-I-N PHOTODETECTORS [J].

BOWERS, JE ;

BURRUS, CA .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (10) :1339-1350

[2] HIGH-SPEED ZERO-BIAS WAVE-GUIDE PHOTODETECTORS [J].

BOWERS, JE ;

BURRUS, CA .

ELECTRONICS LETTERS, 1986, 22 (17) :905-906

[3]

KATO K, 1993, IEICE T ELECTRON, VE76, P214

[4] A HIGH-EFFICIENCY 50-GHZ INGAAS MULTIMODE WAVE-GUIDE PHOTODETECTOR [J].

KATO, K ;

HATA, S ;

KAWANO, K ;

YOSHIDA, J ;

KOZEN, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (12) :2728-2735

[5] HIGH-EFFICIENCY WAVE-GUIDE INGAAS PIN PHOTODIODE WITH BANDWIDTH OF OVER 40 GHZ [J].

KATO, K ;

HATA, S ;

KOZEN, A ;

YOSHIDA, J ;

KAWANO, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (05) :473-474

[6] HIGHLY EFFICIENT 40-GHZ WAVE-GUIDE INGAAS P-I-N PHOTODIODE EMPLOYING MULTIMODE WAVE-GUIDE STRUCTURE [J].

KATO, K ;

HATA, S ;

KOZEN, A ;

YOSHIDA, JI ;

KAWANO, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (09) :820-822

[7] DESIGN OF INGAAS-INALAS MULTIPLE-QUANTUM-WELL (MQW) OPTICAL MODULATORS [J].

KAWANO, K ;

WAKITA, K ;

MITOMI, O ;

KOTAKA, I ;

NAGANUMA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (01) :224-230

[8]

NAGATSUMA T, 1993, IEICE T ELECTRON, VE76C, P55

[9] 50 GHZ INGAAS EDGE-COUPLED PIN PHOTODETECTOR [J].

WAKE, D ;

SPOONER, TP ;

PERRIN, SD ;

HENNING, ID .

ELECTRONICS LETTERS, 1991, 27 (12) :1073-1075

[10] 108-GHZ GAINAS/INP P-I-N PHOTODIODES WITH INTEGRATED BIAS TEES AND MATCHED RESISTORS [J].

WEY, YG ;

GIBONEY, KS ;

BOWERS, JE ;

RODWELL, MJW ;

SILVESTRE, P ;

THIAGARAJAN, P ;

ROBINSON, GY .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (11) :1310-1312

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