Investigation of the humidity effect on the electrical properties of single-walled carbon nanotube transistors

被引:123
作者
Na, PS
Kim, HJ
So, HM
Kong, KJ
Chang, HJ
Ryu, BH
Choi, YM
Lee, JO [1 ]
Kim, BK
Kim, JJ
Kim, JH
机构
[1] Korea Res Inst Chem Technol, Nanmat Res Team, Adv Mat Div, Taejon 305343, South Korea
[2] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea
[3] Korea Res Inst Chem Technol, Nanomat Team, Adv Mat Div, Taejon 305346, South Korea
[4] Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea
[5] Korea Res Inst Standards & Sci, Elect Dev Grp, Taejon 305340, South Korea
关键词
D O I
10.1063/1.2032594
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated the effect of humidity on the electrical transport properties of single-walled carbon nanotube field effect transistors (SWNT-FETs). Water molecules are found to behave as electron donors to the nanotube: Current through the p-type carbon nanotube device is found to decrease under a modest humidity, and starts to increase as the humidity increases over 65%, which is believed to be due to the opening of electron channels. Through first principles calculations based on the density functional theory, we found that water molecules can donate electrons to the carbon nanotube. Moreover, a hydrogen-bonded water monolayer will be formed around the nanotube at fully covered conditions. We suggest that this result could provide a systematic understanding of the humidity effect on SWNT-FETs, which has been believed to be essential in the development of nanotube-based sensors.
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页数:3
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