Effects of substrate temperature and oxygen pressure on crystallographic orientations of sputtered nickel oxide films

被引:26
作者
Chen, HL [1 ]
Lu, YM
Wu, JY
Hwang, WS
机构
[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan
[2] Kun Shan Univ Technol, Dept Elect Engn, Tainan 71003, Taiwan
[3] Kun Shan Univ Technol, Nano Technol Res & Dev Ctr, Tainan 71003, Taiwan
关键词
nickel oxide; reactive sputtering; crystallographic orientation;
D O I
10.2320/matertrans.46.2530
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nickel oxide (NiO) films with NaCl-type structure were deposited onto Corning glass substrates at different substrate temperatures by radio-frequency (RF) magnetron sputtering under an RF power of 200W. The resulting films were analyzed by grazing-incidence X-ray diffraction, ultrahigh resolution scanning electron microscopy (HR-SEM) and high-resolution transmission electron microscopy (HR-TEM). The relationships among the gas ratio of O-2, substrate temperature, preferred orientation and microstructure of the NiO films were investigated. Those films deposited at a substrate temperatures of 303 or 473 K with the ratio of oxygen varying from 0 to 100% displayed a (111) preferred orientation. At the substrate temperature of 673 K, while the (111)-orientated film was obtained under a low ratio of oxygen (< 50%n O-2), a (200) preferred orientation was developed under 100% oxygen. All the films have a columnar structure with the growth direction perpendicular to the surface. The origin of the preferred orientations is also discussed.
引用
收藏
页码:2530 / 2535
页数:6
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