Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium

被引:16
作者
Cederberg, JG
Culp, TD
Bieg, B
Pfeiffer, D
Winter, CH
Bray, KL
Kuech, TF
机构
[1] Univ Wisconsin, Dept Chem Engn, Madison, WI 53706 USA
[2] Wayne State Univ, Dept Chem, Detroit, MI 48202 USA
[3] Washington State Univ, Dept Chem, Pullman, WA 99164 USA
基金
美国国家科学基金会;
关键词
MOVPE; erbium; GaAs; defects; photoluminescence; DLTS;
D O I
10.1016/S0022-0248(98)00582-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A new erbium precursor, tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium was used to dope GaAs. Some of the incorporated erbium forms an optically active center identified as Er-2O. The optical line shape attributed to this Er-2O center is much sharper and more intense than in GaAs doped with erbium using cyclopentadienyl-based erbium sources. Co-doping GaAs:Er with shallow donors results in a quenching of the erbium-related luminescence, while co-doping with shallow accepters results in no significant change in the Er-based spectrum. Mechanisms for this observed luminescence-quenching behavior are presented. Deep level transient spectroscopy performed on silicon or selenium co-doped GaAs : Er showed the presence of several electron traps in the upper half of the band gap. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:105 / 111
页数:7
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