Radiation damage of standard and oxygenated silicon diodes irradiated by 16-MeV and 27-MeV protons

被引：14

作者：

Bisello, D ^{[1
]}

Wyss, J

Candelori, A

Kaminsky, A

Pantano, D

机构：

[1] Univ Padua, Ist Nazl Fis Nucl, I-35131 Padua, Italy

[2] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

[3] Univ Cassino, Fac Ingn, I-03043 Cassino, FR, Italy

[4] Ist Nazl Fis Nucl, I-56010 Pisa, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2001年 / 48卷 / 04期

关键词：

diodes; proton radiation effects; radiation detectors;

D O I：

10.1109/23.958717

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of irradiation by 16- and 27-MeV protons on standard and oxygenated silicon diodes, processed by different technologies, have been investigated. The acceptor creation rate beta can be lower for standard diodes than for state-of-the art oxygenated devices, suggesting that the role of oxygen is more complex than expected and must be folded with the technology of the fabrication process. In addition, we show the inaccuracy of the beta normalization by the nonionizing energy loss factor not only for oxygenated diodes but also for standard nonoxygenated devices.

引用

收藏

页码：1020 / 1027

页数：8

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