A Si nanopillar grown on a Si tip by atomic force microscopy in ultrahigh vacuum for a high-quality scanning probe

被引：14

作者：

Arai, T ^{[1
]}

Tomitori, M ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 07期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.1866213

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We grow a Si nanopillar on a commercial Si tip on an atomic force microscopy (AFM) cantilever using AFM in ultrahigh vacuum for a high-quality scanning force probe, and observe noncontact-AFM (nc-AFM) images of Si(111)7 x 7 and Ge deposited Si(111) with the nanopillar. We observe it ex situ by transmission electron microscopy to confirm its growth and crystallinity. The nc-AFM image clearly showed the high performance of the nanopillar as a probe with respect to the spatial resolution, image stability, and reproducibility. This nanopillar growth technique can elongate the lifetime of the cantilever and be applied to other materials. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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