Bias dependence of Si(111) 7 X 7 images observed by noncontact atomic force microscopy

被引:38
作者
Arai, T [1 ]
Tomitori, M [1 ]
机构
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan
关键词
noncontact atomic force microscopy; Si(111)7 x 7; tip-sample interaction; contrast inversion;
D O I
10.1016/S0169-4332(99)00527-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Noncontact atomic force microscopy (nc-AFM) imaging of a Si(111)7 X 7 surface has been done in order to examine the bias dependence of the contrast of Si adatoms. While the atomic corrugation depends upon the tip states, the contrast is found to be inverted by increasing the bias voltage at greater frequency shifts. Then, the term of the repulsive force between a Si adatom and a Si atom at the tip apex can play an important role in depicting the topography of the sample surface with atomic resolution. The difference in contrast between faulted and unfaulted halves and peculiar profiles near steps are also presented. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:207 / 211
页数:5
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