Resonant Raman scattering in hydrogen and nitrogen doped ZnO

被引：99

作者：

Friedrich, F. ^{[1
]}

Nickel, N. H. ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 11期

关键词：

D O I：

10.1063/1.2783222

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman backscattering measurements were performed on single crystal ZnO for different excitation wavelengths before and after ion implantation with hydrogen and nitrogen. In addition to the formation of H- and N-related defects due to implantation, anomalous Raman modes were observed. Recently, the anomalous Raman modes have been attributed to the disorder-induced activation of silent modes. However, we will show that part of the observed modes are due to the resonantly enhanced longitudinal optical phonons.

引用

页数：3

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