Improved reliability of NO-nitrided SiO2 grown on p-type 4H-SiC

被引：51

作者：

Li, HF ^{[1
]}

Dimitrijev, S ^{[1
]}

Harrison, HB ^{[1
]}

机构：

[1] Griffith Univ, Sch Microelect Engn, Brisbane, Qld 4111, Australia

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 08期

基金：

澳大利亚研究理事会;

关键词：

MOS capacitors; nitridation; oxidation; oxynitride; silicon carbide; stressing;

D O I：

10.1109/55.704399

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter demonstrates that the reliability of oxides grown on p-type 4H-SIC can be dramatically improved by NO nitridation, High-field (-8 MV/cm) room-temperature stressing and high-temperature negative-bias (250 degrees C, -4 MV/cm) testing were used to investigate the reliability of NO nitrided oxides. Relatively small changes in the flat-band voltage, interface-trap density and leakage current were observed after 5000 s in the case of NO nitrided oxides, while shorter stressing shifted these parameters dramatically in the case of N-2 annealed control samples.

引用

页码：279 / 281

页数：3

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