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Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

被引：292
作者：
Li, HF
Dimitrijev, S
Harrison, HB
Sweatman, D
机构：
[1] Sch. of Microelectronics Engineering, Griffith University, Nathan
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 15期
关键词：
D O I：
10.1063/1.118773
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Interfacial characteristics of Al/SiO2/n-type 6H-SiC metal-oxide-semiconductor capacitors fabricated by rapid thermal processing (RTP) with N2O and NO annealing are investigated. Interface state density was measured by a conductance technique at room temperature. RTP oxidation in pure O-2 leads to an excellent SiO2/n-type 6H-SiC interface with interface state density in the order of 10(10)-10(11) eV(-1) cm(-2). NO annealing improves the SiO2/n-type 6H-SiC interface, while N2O annealing: increases the interface state density. (C) 1997 American Institute of Physics.
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页码：2028 / 2030
页数：3
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