Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

Interfacial characteristics of Al/SiO2/n-type 6H-SiC metal-oxide-semiconductor capacitors fabricated by rapid thermal processing (RTP) with N2O and NO annealing are investigated. Interface state density was measured by a conductance technique at room temperature. RTP oxidation in pure O-2 leads to an excellent SiO2/n-type 6H-SiC interface with interface state density in the order of 10(10)-10(11) eV(-1) cm(-2). NO annealing improves the SiO2/n-type 6H-SiC interface, while N2O annealing: increases the interface state density. (C) 1997 American Institute of Physics.