EFFECTS OF NITRIC-OXIDE ANNEALING OF THERMALLY GROWN SILICON DIOXIDE CHARACTERISTICS

被引：40

作者：

YAO, ZQ

HARRISON, HB

DIMITRIJEV, S

YEOW, YT

机构：

[1] GRIFFITH UNIV,SCH MICROELECTR ENGN,NATHAN,QLD 4111,AUSTRALIA

[2] UNIV QUEENSLAND,DEPT ELECT & COMP ENGN,ST LUCIA,QLD 4072,AUSTRALIA

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 08期

关键词：

D O I：

10.1109/55.400733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of nitric oxide (NO) annealing on conventional thermal oxides are reported in this letter. The oxide thickness increase, resulting from NO annealing, is found to be only a few angstroms (<0.5 nm) and independent on the initial oxide thickness, Furthermore, both the electrical and physical characteristics are improved, This technique is expected to achieve sub-5 nm high quality ultrathin dielectric films for the applications in EEPROM's and ULSI.

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页码：345 / 347

页数：3

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