ELECTRICAL CHARACTERISTICS OF AL/SIO2/N-SI TUNNEL-DIODES WITH AN OXIDE LAYER GROWN BY RAPID THERMAL-OXIDATION

被引:124
作者
DEPAS, M
VANMEIRHAEGHE, RL
LAFLERE, WH
CARDON, F
机构
[1] Laboratorium voor kristallografie en studie van de vaste stof, Universiteit Gent, B-9000 Gent, Krijgslaan 281
关键词
D O I
10.1016/0038-1101(94)90009-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ultrathin oxide layers, 2-5 nm thick, have been grown on (100) n-Si by Rapid Thermal Oxidation (RTO) at 900 degrees C. RTO is an effective method to control the oxide thickness in this range to within 10%. The direct tunnelling through these ultrathin layers is examined with current-voltage and impedance measurements on Al/SiO2/n-Si structures with an oxide layer thickness between 2 and 4 nm. After the determination of the surface potential vs bias relation and the oxide layer capacitance from the capacitance-voltage measurements, a quantitative analysis of the current-voltage characteristic based on electron tunnelling from a degenerate accumulation layer through the SiO2 barrier into the metal is made. A very good agreement with the theory is obtained assuming a simple trapezoidal tunnel barrier for the SiO2, from which the tunnel barrier height and the electron effective mass in the SiO2 bandgap are derived. The density of interface traps at the Si/SiO2 interface is determined using the conductance method. Only a very small increase of interface trap density with decreasing oxide layer thickness is found. The very high density of interface traps (more than 3 x 10(12) cm(-2) eV(-1)) can be reduced to the 10(10) cm(-2) eV(-1) level by application of a conventional Post Metallization Anneal (PMA).
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页码:433 / 441
页数:9
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