I-V-CHARACTERISTICS OF TUNNEL MOS STRUCTURES WITH SILICON-OXIDE OBTAINED IN RF OXYGEN PLASMA

被引：9

作者：

ATANASSOVA, ED

PUSHKAROV, DI

机构：

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1016/0038-1101(82)90208-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：781 / 789

页数：9

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