FORMATION OF ULTRATHIN OXIDE-FILMS ON SILICON IN RF OXYGEN PLASMA

被引：13

作者：

ATANASOVA, ED

KIROV, KI

KANTARDJEVA, EI

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 64卷 / 01期

关键词：

D O I：

10.1002/pssa.2210640106

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：73 / 80

页数：8

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