FORMATION OF THIN OXIDE-FILMS OF SILICON BY GAS PLASMA

被引：9

作者：

ABE, H

EMOTO, H

机构：

[1] MITSUBISHI ELECT CORP,CENT RES LAB,AMAGASAKI,HYOGO,JAPAN

[2] MITSUBISHI ELECT CORP KITAITAMI WORKS,HYOGO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 05期

关键词：

D O I：

10.1143/JJAP.15.925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：925 / 926

页数：2

相关论文

共 4 条

[1] ETCHING CHARACTERISTICS OF SILICON AND ITS COMPOUNDS BY GAS PLASMA
ABE, H
SONOBE, Y
ENOMOTO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (01) : 154 - 155
[2] FORMATION OF ULTRATHIN OXIDE-FILMS ON SILICON
FEHLNER, FP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) : 1723 - +
[3] THIN TUNNELABLE LAYERS OF SILICON DIOXIDE FORMED BY OXIDATION OF SILICON
GOODMAN, AM
BREECE, JM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 982 - &
[4] VANDERME.YJ, 1972, J ELECTROCHEM SOC, V119, P530