OXYNITRIDE GATE DIELECTRICS FOR P(+)-POLYSILICON GATE MOS DEVICES

被引：28

作者：

JOSHI, AB

AHN, J

KWONG, DL

机构：

[1] UNIV TEXAS,MICROELECTR RES CTR,DEPT ELECT & COMP ENGN,AUSTIN,TX 78712

[2] NEC CORP LTD,MICROELECTR RES LABS,TSUKUBA,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 12期

关键词：

D O I：

10.1109/55.260789

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Different oxynitride gate dielectrics (NH3-nitrided, reoxidized NH3-nitrided, N2-annealed NH3-nitrided and N2O grown oxides) are investigated for use in p+-polysilicon gate MOS devices. The comparison is based on flatband voltage shift as well as decrease in inversion capacitance. Results show that NH3-nitrided and N2-annealed NH3-nitrided oxides best suppress the boron penetration and, consequently, these two undesirable effects. These findings are explained based on the distribution of nitrogen in various oxynitride dielectrics.

引用

页码：560 / 562

页数：3

共 16 条

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