Nitridation of silicon-dioxide films grown on 6H silicon carbide

被引：63

作者：

Dimitrijev, S

Li, HF

Harrison, HB

Sweatman, D

机构：

[1] Sch. of Microelectronic Engineering, Griffith University, Brisbane

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 05期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1109/55.568752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter addresses the question of why it is possible to grow high-quality oxide films on N-type but not on P-type SiC. It provides results which indicate that the oxide/SiC interface would be inferior to the oxide/Si interface for both, N-type and P-type SiC, if it were not for the beneficial effects of nitrogen incorporation, The letter presents, for the first time, results on nitridation of thermally grown oxides in NO and N2O, The results demonstrate that the oxides grown on P-type can be improved by NO annealing, but not by N2O annealing.

引用

收藏

页码：175 / 177

页数：3

相关论文

共 24 条

[1] Band offsets and electronic structure of SiC/SiO2, interfaces [J].

Afanas'ev, VV ;

Bassler, M ;

Pensl, G ;

Schulz, MJ ;

vonKamienski, ES .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (06) :3108-3114

[2] ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN USING DRY OXIDATION ON P-TYPE 6H-SILICON CARBIDE [J].

ALOK, D ;

MCLARTY, PK ;

BALIGA, BJ .

APPLIED PHYSICS LETTERS, 1994, 65 (17) :2177-2178

[3]

[Anonymous], PHYS SEMICONDUCTOR D

[4] MOS CHARACTERISTICS OF ULTRATHIN NO-GROWN OXYNITRIDES [J].

BHAT, M ;

KIM, J ;

YAN, J ;

YOON, GW ;

HAN, LK ;

KWONG, DL .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (10) :421-423

[5] ELECTRICAL-PROPERTIES AND RELIABILITY OF MOSFETS WITH RAPID THERMAL NO-NITRIDED SIO2 GATE DIELECTRICS [J].

BHAT, M ;

WRISTERS, DJ ;

HAN, LK ;

YAN, J ;

FULFORD, HJ ;

KWONG, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) :907-914

[6] SIC MOS INTERFACE CHARACTERISTICS [J].

BROWN, DM ;

GHEZZO, M ;

KRETCHMER, J ;

DOWNEY, E ;

PIMBLEY, J ;

PALMOUR, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (04) :618-620

[7]

DEMAO RC, 1994, J ELECTROCHEM SOC, V141, pL150

[8] Extension of the Deal-Grove oxidation model to include the effects of nitrogen [J].

Dimitrijev, S ;

Harrison, HB ;

Sweatman, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (02) :267-272

[9] HIGHLY RELIABLE THIN NITRIDED SIO2-FILMS FORMED BY RAPID THERMAL-PROCESSING IN AN N2O AMBIENT [J].

FUKUDA, H ;

ARAKAWA, T ;

OHNO, S .

ELECTRONICS LETTERS, 1990, 26 (18) :1505-1506

[10] EFFECTS OF N2O ANNEAL AND REOXIDATION ON THERMAL OXIDE CHARACTERISTICS [J].

LIU, ZH ;

WANN, HJ ;

KO, PK ;

HU, CM ;

CHENG, YC .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (08) :402-404