MOS CHARACTERISTICS OF ULTRATHIN NO-GROWN OXYNITRIDES

被引：77

作者：

BHAT, M

KIM, J

YAN, J

YOON, GW

HAN, LK

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.320988

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report for the first time, the growth of high quality ultrathin oxynitrides formed by nitridation of SiO2 in nitric oxide (NO) ambient using in-situ rapid thermal processing (RTP). This process is highly self-limited compared with N2O oxidation of silicon. A significant improvement in the interface endurance and charge trapping properties, under constant current stress, compared to pure O-2-grown and N2O-grown oxides is observed. The NO growth process will have a great impact on future CMOS and EEPROM technologies.

引用

页码：421 / 423

页数：3

共 11 条

[1] SIO2 DEGRADATION WITH CHARGE INJECTION POLARITY [J].