Optically pumped integrated absorber 3.4 μm laser with InAs-to-InGaAsSb type-II transition

被引：18

作者：

Kaspi, R

Ongstad, A

Moeller, C

Dente, GC

Chavez, J

Tilton, ML

Gianardi, D

机构：

[1] USAF, Res Lab, Directed Energy Directorate, Adv Tact Syst Branch,AFRL DELS, Albuquerque, NM 87117 USA

[2] GCD Associates, Albuquerque, NM 87110 USA

[3] Boeing Def & Space Grp, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 03期

关键词：

D O I：

10.1063/1.1385581

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report optically pumped lasing at lambda similar to3.4 mum from an integrated absorber structure in which the electrons confined in the InAs quantum wells recombine with holes in adjacent InGaAsSb layers to provide the gain. This type-II laser exhibits an estimated photon-to-photon conversion rate of similar to 24% at 85 K. The self-consistent empirical pseudopotential method calculations suggest that Coulomb attraction can lead to a strong enhancement in carrier overlap, and the resulting small shift in transition energy is consistent with that observed. (C) 2001 American Institute of Physics.

引用

页码：302 / 304

页数：3

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