Low-loss high-efficiency and high-power diode-pumped mid-infrared GaInSb/InAs quantum well lasers

被引：33

作者：

Le, HQ

Lin, CH

Pei, SS

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02173 USA

[2] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77204 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 26期

关键词：

D O I：

10.1063/1.121657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 4-mu m GaInSb/InAs type-II quantum well (QW) laser has shown a substantial improvement in internal loss and quantum efficiency, which has been a problem for this type of laser. It yielded 0.9-1.5 W peak, 90-150 mW average single-ended output for 0.1-1 ms pulses at 71 K, with a net power efficiency of similar to 3.5%-4%. The power and efficiency are among the highest long-pulse results reported for any semiconductor laser of comparable wavelength. Comparison with similar QW lasers suggests that the improvement is a result of better material growth. (C) 1998 American Institute of Physics.

引用

页码：3434 / 3436

页数：3

共 18 条

[1] Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures [J].