Turn-key, liquid-nitrogen-cooled 3.9 mu m semiconductor laser package with 0.2W CW output

被引：16

作者：

Le, HQ

Turner, GW

Ochoa, JR

机构：

[1] Lincoln Laboratory, Massachusetts Inst. of Technology, Lexington, MA 02173-9108

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 25期

关键词：

semiconductor junction lasers;

D O I：

10.1049/el:19961556

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CW 3.9 mu m diode-pumped InAsSb/GaSb laser yielded 0.2 W at 84 K and 0.26 W at similar to 68 K in a collimated beam, limited only by the pump power. The beam exhibited 62% coupling efficiency into a 250 mu m core, 0.2 NA infrared fibre.

引用

页码：2359 / 2360

页数：2

共 10 条

[1] AYDARALIEV M, 1993, INFRARED PHYS TECHN, V37, P83
[2] High CW power (>200mW/facet) at 3.4 mu m from InAsSb/InAlAsSb strained quantum well diode lasers
Choi, HK
Turner, GW
Manfra, MJ
[J]. ELECTRONICS LETTERS, 1996, 32 (14) : 1296 - 1297
[3] CHOI HK, 1995, P INT C NARR GAP SEM, P1
[4] High power mid-infrared (lambda greater than or similar to-5 mu m) quantum cascade lasers operating above room temperature
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[5] DEMONSTRATION OF 3.5 MU-M GA1-XINXSB/INAS SUPERLATTICE DIODE-LASER
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[J]. ELECTRONICS LETTERS, 1995, 31 (04) : 275 - 276
[6] LE HQ, 1995, P SOC PHOTO-OPT INS, V2382, P262, DOI 10.1117/12.208454
[7] DIODE-LASER-PUMPED INGAAS/GAAS/ALGAAS HETEROSTRUCTURE LASERS WITH LOW INTERNAL LOSS AND 4-W AVERAGE POWER
LE, HQ
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MAKI, PA
DICECCA, S
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (11) : 1465 - 1467
[8] Type II mid-infrared quantum well lasers
Malin, JI
Meyer, JR
Felix, CL
Lindle, JR
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Bartoli, FJ
Lin, CH
Chang, PC
Murry, SJ
Yang, RQ
Pei, SS
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (21) : 2976 - 2978
[9] High power InAsSb/InAsSbP double heterostructure laser for continuous wave operation at 3.6 mu m
Popov, A
Sherstnev, V
Yakovlev, Y
Mucke, R
Werle, P
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (20) : 2790 - 2792
[10] ZHANG YH, 1995, CLEO QELS 95 JWE, V3, P247

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