Influence of structure development on atomic layer deposition of TiO2 thin films

被引：93

作者：

Aarik, J

Karlis, J

Mändar, H

Uustare, T

Sammelselg, V

机构：

[1] Univ Tartu, Inst Sci Mat, EE-51010 Tartu, Estonia

[2] Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia

来源：

APPLIED SURFACE SCIENCE | 2001年 / 181卷 / 3-4期

关键词：

atomic layer deposition; titanium dioxide; crystallization; surface morphology; adsorption;

D O I：

10.1016/S0169-4332(01)00430-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Microstructure of titanium dioxide (TiO2) thin films grown in the atomic layer deposition (ALD) process from titanium ethoxide (Ti(OCH2CH3)(4)) and water (H2O) vapor was studied. It was revealed that formation of crystalline (anatase) phase in the films at 200 degreesC and higher substrate temperatures resulted in considerable surface roughening and increase in the growth rate. The effect most markedly contributed to the film growth at 200 degreesC. At this temperature, the average growth rate increased 1.4 times with the increase of film thickness from about 100 to 280 nm. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：339 / 348

页数：10

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