Response to "Comment on 'Unraveling the conduction mechanism of Al-doped ZnO films by valence band soft X-ray photoemission'" [Appl. Phys. Lett. 86, 216101 (2005)] -: art. no. 216102

被引：1

作者：

Gabás, M

Gota, S

Ramos-Barrado, JR

Sánchez, M

Barrett, NT

Avila, J

Sacchi, M

机构：

[1] Univ Malaga, Dept Fis Aplicada 1, E-29071 Malaga, Spain

[2] CEA Saclay, CEA DSM, DRECAM SPCSI, F-91191 Gif Sur Yvette, France

[3] Ctr Univ Paris Sud, LURE, F-91898 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 21期

关键词：

D O I：

10.1063/1.1935760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页数：1

共 5 条

[1] Unraveling the conduction mechanism of Al-doped ZnO films by valence band soft x-ray photoemission spectroscopy -: art. no. 042104 [J].

Gabás, M ;

Gota, S ;

Ramos-Barrado, JR ;

Sánchez, M ;

Barrett, NT ;

Avila, J ;

Sacchi, M .

APPLIED PHYSICS LETTERS, 2005, 86 (04) :042104-1

[2] Comment on "Unraveling the conduction mechanism of Al-doped ZnO films by valence band soft x-ray photoemission spectroscopy" [Appl. Phys. Lett. 86, 042104 (2005)] [J].

Lin, YJ .

APPLIED PHYSICS LETTERS, 2005, 86 (21)

[3] ZnO:Al thin films obtained by chemical spray:: effect of the Al concentration [J].

Mondragón-Suárez, H ;

Maldonado, A ;

Olvera, MDL ;

Reyes, A ;

Castanedo-Pérez, R ;

Torres-Delgado, G ;

Asomoza, R .

APPLIED SURFACE SCIENCE, 2002, 193 (1-4) :52-59

[4] Band-edge emission of undoped and doped ZnO single crystals at room temperature [J].

Ohashi, N ;

Sekiguchi, T ;

Aoyama, K ;

Ohgaki, T ;

Terada, Y ;

Sakaguchi, I ;

Tsurumi, T ;

Haneda, H .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (06) :3658-3663

[5] BAND-GAP NARROWING IN HEAVILY DEFECT-DOPED ZNO [J].

ROTH, AP ;

WEBB, JB ;

WILLIAMS, DF .

PHYSICAL REVIEW B, 1982, 25 (12) :7836-7839

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