BAND-GAP NARROWING IN HEAVILY DEFECT-DOPED ZNO

被引：279

作者：

ROTH, AP

WEBB, JB

WILLIAMS, DF

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.25.7836

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7836 / 7839

页数：4

共 18 条

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J].

ABRAM, RA ;

REES, GJ ;

WILSON, BLH .

ADVANCES IN PHYSICS, 1978, 27 (06) :799-892

[2] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE SI [J].

BALKANSKI, M ;

AZIZA, A ;

AMZALLAG, E .

PHYSICA STATUS SOLIDI, 1969, 31 (01) :323-+

[3] BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J].

BERGGREN, KF ;

SERNELIUS, BE .

PHYSICAL REVIEW B, 1981, 24 (04) :1971-1986

[4] METAL TO NONMETAL TRANSITIONS IN DOPED GERMANIUM AND SILICON [J].

BERGGREN, KF .

PHILOSOPHICAL MAGAZINE, 1973, 27 (05) :1027-1040

[5]

Brodie D. E., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P468

[6] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].

CASEY, HC ;

STERN, F .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643

[7] DIELECTRIC ANOMALY AND METAL-INSULATOR TRANSITION IN N-TYPE SILICON [J].

CASTNER, TG ;

LEE, NK ;

CIELOSZYK, GS ;

SALINGER, GL .

PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1627-1630

[8] ENERGY-GAP IN SI AND GE - IMPURITY DEPENDENCE [J].

MAHAN, GD .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2634-2646

[9]

MOTT NF, 1974, METAL INSULATOR TRAN, pCH6

[10]

MURTI DK, 1981, UNPUB P S SPUTTERING

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