Experimental verification of the nature of the high energy tail in the electron energy distribution in n-channel MOSFETs

Sensitive quantum-yield measurements (M) on n-channel MOSFETs for drain voltages (V-D) near the bandgap voltage of silicon, showed an abnormal bell-shaped M versus gate voltage (V-G) characteristic at 77 K. At higher V-D, M decreases monotonously with increasing V-G. Measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups and provide simultaneous experimental verification for the presence of a tail that depends strongly on lattice temperature and electron-electron interaction (EEI) broadening of the tail. Our data suggest EEI broadening of the tail even in the subthreshold regime.