Effects of heat treatments on microstructure formation in MgB2/YSZ/Hastelloy film

被引:10
作者
Hata, S [1 ]
Sosiati, H
Kuwano, N
Tomokiyo, Y
Matsumoto, A
Fukutomi, M
Kitaguchi, H
Komori, K
Kumakura, H
机构
[1] Kyushu Univ, ASEM, Kasuga, Fukuoka 8168580, Japan
[2] Kyushu Univ, HVEM, Fukuoka 8128581, Japan
[3] Kyushu Univ, ASTEC, Kasuga, Fukuoka 8168580, Japan
[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
关键词
heat treatment; MgB2; film; transmission electron microscopy; yttria-stabilized zirconia;
D O I
10.1109/TASC.2005.848834
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Annealing processes in MgB2 films deposited on yttria-stabilized zirconia (YSZ)-buffered Hastelloy substrates were studied by transmission electron microscopy. The MgB2, films with Mg-rich compositions were fabricated at room temperature using a pulsed laser deposition (PLD) method. The as-deposited films do not exhibit clear superconducting transitions, and have inhomogeneous microstructures composed of amorphous regions and a small amount of crystalline MgB2 and MgO with several tens of nm in size. Various sizes of voids are also incorporated within the amorphous regions. After the annealing at 600 or 680 degrees C, the films exhibit clear superconducting transitions. The amorphous regions crystallize into fine grains of MgB2 or MgO 5-50 nm in size. The voids remain in the annealed films and their sizes depend on the annealing condition. Magnesium-and oxygen-rich layers are formed near the MgB2/YSZ interface and the film surface. It is suggested that the finer grains of MgB2 and MgO obtained by the lower-temperature annealing give a larger critical current density under a high magnetic field.
引用
收藏
页码:3238 / 3241
页数:4
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