Ag(Ta, Nb)O3 thin-film low-loss variable interdigital capacitors

被引：30

作者：

Koh, JH ^{[1
]}

Grishin, A ^{[1
]}

机构：

[1] Royal Inst Technol, Dept Condensed Matter Phys, S-10044 Stockholm, Sweden

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 14期

关键词：

D O I：

10.1063/1.1407305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial silver tantalate-niobate Ag(Ta, Nb)O-3 (ATN) films have been grown on LaAlO3(001) MgO(001), and Al2O3(011_2) single crystals by pulsed ablation of stoichiometric AgTa0.38Nb0.62O3 ceramic target. Rutherford backscattering spectroscopy has revealed Ag0.9Ta0.42Nb0.58O3-delta composition of fabricated films. Micrometer size interdigital capacitor structures have been defined photolithographically on the top surface of ATN films. ATN/LaAlO3 thin-film capacitors exhibit superior overall performance: loss tangent as low as 0.0033 @1 MHz, dielectric permittivity 224 @1 kHz, weak frequency dispersion of 5.8% in 1 kHz to 1 MHz range, tunability as high as 16.8%, factor K=tunability/tan delta higher than 48, and leakage current as low as 230 nA/cm2 @100 kV/cm. ATN films on MgO show the lowest loss factor of 0.0025 @1 MHz and the weakest frequency dispersion of 2.5x10(-8) Hz(-1). (C) 2001 American Institute of Physics.

引用

页码：2234 / 2236

页数：3

共 10 条

[1] Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz [J].

Baniecki, JD ;

Laibowitz, RB ;

Shaw, TM ;

Duncombe, PR ;

Neumayer, DA ;

Kotecki, DE ;

Shen, H ;

Ma, QY .

APPLIED PHYSICS LETTERS, 1998, 72 (04) :498-500

[2] Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications [J].

Chen, CL ;

Feng, HH ;

Zhang, Z ;

Brazdeikis, A ;

Huang, ZJ ;

Chu, WK ;

Chu, CW ;

Miranda, FA ;

Van Keuls, FW ;

Romanofsky, RR ;

Liou, Y .

APPLIED PHYSICS LETTERS, 1999, 75 (03) :412-414

[3]

Cho CR, 1999, APPL PHYS LETT, V75, P268, DOI 10.1063/1.124344

[4] Background oxygen effects on pulsed laser deposited Na0.5K0.5NbO3 films:: From superparaelectric state to ferroelectricity [J].

Cho, CR ;

Grishin, A .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4439-4448

[5] Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices [J].

Im, J ;

Auciello, O ;

Baumann, PK ;

Streiffer, SK ;

Kaufman, DY ;

Krauss, AR .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :625-627

[6] Ferroelectric silver niobate-tantalate thin films [J].

Koh, JH ;

Khartsev, SI ;

Grishin, A .

APPLIED PHYSICS LETTERS, 2000, 77 (26) :4416-4418

[7] Near single crystal-level dielectric loss and nonlinearity in pulsed laser deposited SrTiO3 thin films [J].

Li, HC ;

Si, WD ;

West, AD ;

Xi, XX .

APPLIED PHYSICS LETTERS, 1998, 73 (02) :190-192

[8] High nonlinearity of Ba0.6Sr0.4TiO3 films heteroepitaxially grown on MgO substrates [J].

Park, BH ;

Gim, Y ;

Fan, Y ;

Jia, QX ;

Lu, P .

APPLIED PHYSICS LETTERS, 2000, 77 (16) :2587-2589

[9] HIGH-FREQUENCY DIELECTRIC SPECTRA OF AGTAO3-AGNBO3 MIXED CERAMICS [J].

VOLKOV, AA ;

GORSHUNOV, BP ;

KOMANDIN, G ;

FORTIN, W ;

KUGEL, GE ;

KANIA, A ;

GRIGAS, J .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (04) :785-793

[10] Composition, structure, and dielectric tunability of epitaxial SrTiO3 thin films grown by radio frequency magnetron sputtering [J].

Wang, X ;

Helmersson, U ;

Madsen, LD ;

Ivanov, IP ;

Münger, P ;

Rudner, S ;

Hjörvarsson, B ;

Sundgren, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (02) :564-570

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