Ten-Nanometer Ferroelectric Si:HfO2 Films for Next-Generation FRAM Capacitors

被引：144

作者：

Mueller, Stefan ^{[1
]}

Summerfelt, Scott R. ^{[2
]}

Mueller, Johannes ^{[3
]}

Schroeder, Uwe ^{[1
]}

Mikolajick, Thomas ^{[1
,4
]}

机构：

[1] NaMLab gGmbH, D-01187 Dresden, Germany

[2] Texas Instruments Inc, Dallas, TX 75243 USA

[3] Fraunhofer CNT, D-01099 Dresden, Germany

[4] Tech Univ Dresden, Inst Semicond & Microsyst, D-01187 Dresden, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 09期

关键词：

Doped HfO2; ferroelectric HfO2; ferroelectric thin films; ferroelectric random access memory (FRAM); nucleation-limited switching (NLS);

D O I：

10.1109/LED.2012.2204856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric properties of Si-doped HfO2 thin films (10 nm) have been investigated. The focus of this letter is to evaluate the potential applicability of these thin films for future 3-D ferroelectric random access memory capacitors. Polarization switching was tested at elevated temperatures up to 185 degrees C and showed no severe degradation. Domain switching dynamics were electrically characterized with pulse-switching tests and were not in accordance with Kolmogorov-Avrami-type switching. Nucleation-limited switching is proposed to be applicable for these new types of ferroelectric thin films. Furthermore, same-state and opposite-state retention tests were performed at 125 degrees C up to 20 h. It was found that samples that had previously been annealed at 800 degrees C showed improved retention of the written state as well as of the opposite state. In addition, fatigue measurements were carried out, and no degradation occurred for 10(6) programming and erase cycles at 3 V.

引用

页码：1300 / 1302

页数：3

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