High mobility strained Ge PMOSFETs with high-κ gate dielectric and metal gate on Si substrate

被引：5

作者：

Donnelly, J. P. ^{[1
]}

Kelly, D. Q. ^{[1
]}

Garcia-Gutierrez, D. I. ^{[2
]}

Jose-Yacaman, M. ^{[2
]}

Banerjee, S. K. ^{[1
]}

机构：

[1] Univ Texas Austin, Ctr Microelect Res, Austin, TX 78758 USA

[2] Univ Texas Austin, Dept Chem Engn, Austin, TX 78712 USA

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 03期

关键词：

D O I：

10.1049/el:20082558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A thin (similar to 20 nm) compressively-strained selective epitaxially grown Ge film was grown on small Si active areas by ultra-high vacuum-chemical vapour deposition. The Ge PMOSFETs with HfO2 gate dielectric show a similar to 2X drive current enhancement and greater than 2X improvement in hole mobility compared to control Si PMOSFETs.

引用

页码：240 / U24

页数：2

共 6 条

[1] MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages [J].

Chen, K ;

Wann, HC ;

Dunster, J ;

Ko, PK ;

Hu, CM ;

Yoshida, M .

SOLID-STATE ELECTRONICS, 1996, 39 (10) :1515-1518

[2]

Chui CO, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P437, DOI 10.1109/IEDM.2002.1175872

[3] THE EFFECT OF SUBSTRATE GROWTH AREA ON MISFIT AND THREADING DISLOCATION DENSITIES IN MISMATCHED HETEROSTRUCTURES [J].

FITZGERALD, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :782-788

[4]

Ritenour A, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P433

[5]

Shang HL, 2004, IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, P157

[6]

ZIMMERMAN P, 2006, IEDM, P439

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