Thin macroporous silicon heterojunction solar cells

被引：19

作者：

Ernst, Marco ^{[1
]}

Brendel, Rolf ^{[1
,2
]}

Ferre, Rafel ^{[1
]}

Harder, Nils-Peter ^{[1
,3
]}

机构：

[1] Inst Solar Energy Res Hamelin ISFH, D-31860 Emmerthal, Germany

[2] Leibniz Univ Hannover, Dept Solar Energy, Inst Solid State Phys, D-30167 Hannover, Germany

[3] Leibniz Univ Hannover, Inst Elect Mat & Devices, D-30167 Hannover, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 05期

关键词：

thin films; macroporous silicon; layer transfer; monocrystalline wafers; heterojunctions; kerf-free technologies; SI;

D O I：

10.1002/pssr.201206113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate the processing of a heterojunction solar cell from a purely macroporous silicon (MacPSi) absorber that is generated and separated from a monocrystalline n-type Cz silicon wafer by means of electrochemical etching. The etching procedure results in straight pores with a diameter of (4.7 +/- 0.2) mu m and a distance of 8.3 mu m. An intrinsic amorphous Si (a-Si)/p+-type a-Si/indium tin oxide (ITO) layer stack is on the front side and an intrinsic a-Si/n+-type a-Si/ITO layer stack is on the rear side. The pores are open when depositing the layers onto the 3.92 cm2-sized cell. The conductive layers do not cause shunting through the pores. A silicon oxide layer passivates the pore walls. The energy-conversion efficiency of the (33 +/- 2) mu m thick cell is 7.2%. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页码：187 / 189

页数：3

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