Characterization of strained Si/Si1-yCy structures prepared by molecular beam epitaxy

被引：3

作者：

Joelsson, KB ^{[1
]}

Ni, WX ^{[1
]}

Pozina, G ^{[1
]}

Pettersson, LAA ^{[1
]}

Hallberg, T ^{[1
]}

Monemar, B ^{[1
]}

Hansson, GV ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.589846

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Various structures containing Si1-yCy alloy layers have been prepared and characterized by x-ray diffraction , cross sectional transmission electron microscopy, photoluminescence (PL), Fourier transform infrared spectroscopy, and spectroscopic ellipsometry. A band gap reduction equal to 63 meV/% C has been estimated from PL when taking into account the quantum well (QW) confinement shift using an effective mass calculation. The QW-related emission observed from a multiple QW structure has a temperature quenching behavior with an activation energy equal to 8 meV. Carbon outdiffusion from the QWs has been evidenced by a blueshift of the PL peak and changes in the x-ray diffraction data after furnace annealing at 800 and 850 degrees C. (C) 1998 American Vacuum Society.

引用

页码：1621 / 1626

页数：6

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