X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers

被引:27
作者
Lee, CH
Chi, GC
Lin, CF
Feng, MS
Guo, JD
机构
[1] NATL CENT UNIV,DEPT PHYS,CHUNGLI 32054,TAIWAN
[2] NATL CHIAO TUNG UNIV,DEPT MAT SCI & ENGN,HSINCHU 30049,TAIWAN
[3] NATL CHIAO TUNG UNIV,DEPT ELECTR ENGN,HSINCHU 30049,TAIWAN
关键词
D O I
10.1063/1.115786
中图分类号
O59 [应用物理学];
学科分类号
摘要
Samples of GnN(0001) epitaxial films on sapphire Al2O3(0001) with different thicknesses of GaN buffer layers were characterized by x-ray diffraction method in both in-plane and plane-normal directions. The results show that all the epitaxial films Me of good quality with the GaN[<10(1)over bar 0>] parallel to Al2O3[<11(2)over bar 0>] and GaN[<1(2)over bar 10>]parallel to Al2O3[<1(1)over bar 00>]. This arrangement of crystal orientation can be attributed to the chemical potential overriding the lattice spacing mismatch. The x-my results also indicate that the crystal coherence lengths; in the in-plane direction are smaller than those measured in the plane-normal direction, i.e., a columnar-like structure normal to the film is observed; The rocking curve widths in the in-plane direction are also larger than those measured in the plane-normal direction. In-plane measurement of rocking curve and coherence length are essential physical quantities directly related to the electron mobility which was measured predominantly in the in-plane direction. The best epitaxial structure is the one grown with 10 nm buffer layer. (C) 1996 American Institute of Physics.
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页码:3440 / 3442
页数:3
相关论文
共 6 条
[1]   METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].
AMANO, H ;
SAWAKI, N ;
AKASAKI, I ;
TOYODA, Y .
APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355
[2]   HIGH-QUALITY GAN HETEROEPITAXIAL FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].
FERTITTA, KG ;
HOLMES, AL ;
NEFF, JG ;
CIUBA, FJ ;
DUPUIS, RD .
APPLIED PHYSICS LETTERS, 1994, 65 (14) :1823-1825
[3]  
Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495
[4]   INFLUENCE OF BUFFER LAYERS ON THE DEPOSITION OF HIGH-QUALITY SINGLE-CRYSTAL GAN OVER SAPPHIRE SUBSTRATES [J].
KUZNIA, JN ;
KHAN, MA ;
OLSON, DT ;
KAPLAN, R ;
FREITAS, J .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (09) :4700-4702
[5]   USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM [J].
MANASEVIT, HM ;
ERDMANN, FM ;
SIMPSON, WI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1864-+
[6]   NOVEL METALORGANIC CHEMICAL VAPOR-DEPOSITION SYSTEM FOR GAN GROWTH [J].
NAKAMURA, S ;
HARADA, Y ;
SENO, M .
APPLIED PHYSICS LETTERS, 1991, 58 (18) :2021-2023