Defects and impurities in graphene- like materials

被引：314

作者：

Araujo, Paulo T. ^{[1
]}

Terrones, Mauricio ^{[2
,3
,4
]}

Dresselhaus, Mildred S. ^{[1
,5
]}

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[2] Penn State Univ, Dept Phys, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[3] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[4] Shinshu Univ, Res Ctr Exot Nanocarbons JST, Nagano 3808553, Japan

[5] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

MATERIALS TODAY | 2012年 / 15卷 / 03期

关键词：

CHEMICAL-VAPOR-DEPOSITION; CARBON NANOTUBES; RAMAN-SPECTROSCOPY; ELECTRICAL-PROPERTIES; ELECTRONIC-PROPERTIES; GRAIN-BOUNDARIES; PLANAR;

D O I：

10.1016/S1369-7021(12)70045-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Graphene-like materials could be used in the fabrication of electronic and optoelectronic devices, gas sensors, biosensors, and batteries for energy storage. Since it is almost impossible to work with defect-free or impurityfree materials, it is essential to understand how defects and impurities alter the electronic and vibrational properties of these systems. Technologically speaking it is more important to distinguish between different types of defects (impurities) and determine if their presence is desirable or not. This review discusses these issues and provides an updated overview of the current characterization tools able to identify and detect defects in different forms of graphene.

引用

页码：98 / 109

页数：12

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