Electronic properties of grains and grain boundaries in graphene grown by chemical vapor deposition

被引：116

作者：

Jauregui, Luis A. ^{[2
,3
]}

Cao, Helin ^{[1
,2
]}

Wu, Wei ^{[4
,5
]}

Yu, Qingkai ^{[4
,5
,6
]}

Chen, Yong P. ^{[1
,2
,3
]}

机构：

[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[4] Univ Houston, Ctr Adv Mat, Houston, TX 77204 USA

[5] Univ Houston, Dept Elect & Comp Engn, Houston, TX 77204 USA

[6] Texas State Univ, Engn & Commercializat Program, Ingram Sch Engn & Mat Sci, San Marcos, TX 78666 USA

来源：

SOLID STATE COMMUNICATIONS | 2011年 / 151卷 / 16期

关键词：

Graphene; Chemical vapor deposition; Grain boundary; Electronic transport; LARGE-AREA; FILMS; SIZE;

D O I：

10.1016/j.ssc.2011.05.023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We synthesize hexagonal shaped single-crystal graphene, with edges parallel to the zig-zag orientations, by ambient pressure CVD on polycrystalline Cu foils. We measure the electronic properties of such grains as well as of individual graphene grain boundaries, formed when two grains merged during the growth. The grain boundaries are visualized using Raman mapping of the D band intensity, and we show that individual boundaries between coalesced grains impede electrical transport in graphene and induce prominent weak localization, indicative of intervalley scattering in graphene. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1100 / 1104

页数：5

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