Grain Boundary Mapping in Polycrystalline Graphene

被引：556

作者：

Kim, Kwanpyo ^{[1
,2
,3
]}

Lee, Zonghoon ^{[4
,5
]}

Regan, William ^{[1
,2
,3
]}

Kisielowski, C. ^{[4
]}

Crommie, M. F. ^{[1
,2
,3
]}

Zettl, A. ^{[1
,2
,3
]}

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Ctr Integrated Nanomech Syst, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA

[5] Ulsan Natl Inst Sci & Technol, Sch Mech & Adv Mat Engn, Ulsan 689798, South Korea

来源：

ACS NANO | 2011年 / 5卷 / 03期

基金：

美国国家科学基金会;

关键词：

graphene; polycrystalline; grain; grain boundary; transmission electron microscopy (TEM); SCANNING-TUNNELING-MICROSCOPY; CHEMICAL-VAPOR-DEPOSITION; LAYER GRAPHENE; EPITAXIAL GRAPHENE; LARGE-AREA; GRAPHITE; FILMS; STRENGTH; DEFECTS;

D O I：

10.1021/nn1033423

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report direct mapping of the grains and grain boundaries (GBs) of large-area monolayer polycrystalline graphene sheets, at large (several micrometer) and single-atom length scales. Global grain and GB mapping is performed using electron diffraction in scanning transmission electron microscopy (STEM) or using dark-field imaging in conventional TEM. Additionally, we employ aberration-corrected TEM to extract direct images of the local atomic arrangements of graphene GBs, which reveal the alternating pentagon-heptagon structure along high-angle GBs. Our findings provide a readily adaptable tool for graphene GB studies.

引用

页码：2142 / 2146

页数：5

共 31 条

[1] OBSERVATION OF TILT BOUNDARIES IN GRAPHITE BY SCANNING TUNNELING MICROSCOPY AND ASSOCIATED MULTIPLE TIP EFFECTS [J].

ALBRECHT, TR ;

MIZES, HA ;

NOGAMI, J ;

PARK, SI ;

QUATE, CF .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :362-364

[2]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[3] Superior thermal conductivity of single-layer graphene [J].

Balandin, Alexander A. ;

Ghosh, Suchismita ;

Bao, Wenzhong ;

Calizo, Irene ;

Teweldebrhan, Desalegne ;

Miao, Feng ;

Lau, Chun Ning .

NANO LETTERS, 2008, 8 (03) :902-907

[4] Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].

Berger, C ;

Song, ZM ;

Li, TB ;

Li, XB ;

Ogbazghi, AY ;

Feng, R ;

Dai, ZT ;

Marchenkov, AN ;

Conrad, EH ;

First, PN ;

de Heer, WA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916

[5] Thermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition [J].

Cai, Weiwei ;

Moore, Arden L. ;

Zhu, Yanwu ;

Li, Xuesong ;

Chen, Shanshan ;

Shi, Li ;

Ruoff, Rodney S. .

NANO LETTERS, 2010, 10 (05) :1645-1651

[6] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[7] Structural and electronic properties of grain boundaries in graphite: Planes of periodically distributed point defects [J].

Cervenka, J. ;

Flipse, C. F. J. .

PHYSICAL REVIEW B, 2009, 79 (19)

[8] Structural coherency of graphene on Ir(111) [J].

Coraux, Johann ;

N'Diaye, Alpha T. ;

Busse, Carsten ;

Michely, Thomas .

NANO LETTERS, 2008, 8 (02) :565-570

[9] Epitaxial Graphene on Cu(111) [J].

Gao, Li ;

Guest, Jeffrey R. ;

Guisinger, Nathan P. .

NANO LETTERS, 2010, 10 (09) :3512-3516

[10] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

← 1 2 3 4 →