Hole confinement in a Si/GeSi/Si quantum well on SIMOX

被引：9

作者：

Nayak, DK

Woo, JCS

Park, JS

Wang, KL

MacWilliams, KP

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,LOS ANGELES,CA 90024

[2] CALTECH,JET PROP LAB,PASADENA,CA 91109

[3] AEROSP CORP,EL SEGUNDO,CA 90009

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 01期

关键词：

D O I：

10.1109/16.477614

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, hole confinement in a MBE-grown Si/GeSi/Si quantum well on SIMOX substrate is investigated in detail using device simulation, electronic measurements, and optical techniques. The hole confinement is clearly demonstrated from GeSi PMOSFET measurements. The experimental results are in good agreement with device simulation results. The quantum confinement of holes in the GeSi quantum well on SIMOX is confirmed using photoluminescence measurements.

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页码：180 / 182

页数：3

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