Electrical properties of high-quality ultrathin nitride/oxide stack dielectrics

被引:61
作者
Shi, Y [1 ]
Wang, XW
Ma, TP
机构
[1] Yale Univ, Ctr Microelect Mat & Struct, New Haven, CT 06520 USA
[2] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
基金
美国国家科学基金会;
关键词
D O I
10.1109/16.740903
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The electrical properties of ultrathin nitride/oxide (N/O) stack dielectrics (2-4 nm). produced by in-situ jet vapor deposition (JVD), have been studied in some detail. Both theoretical calculation and experimental data show that the leakage current in the N/O stack is substantially lower than that in the single oxide layer of the same equivalent oxide thickness (EOT), When compared to the single nitride laver, the N/O stack yields a lower leakage current in the 3-nm thickness regime, In the 2-nm thickness regime, however, the leakage currents in the single nitride layer and the NIO stack are comparable. The tunneling current in the N/O stack depends not only on the thickness combination of the nitride and the oxide layers, but also on the injection polarity, Other important electrical properties of the N/O stack, including time-dependent-dielectric-breakdown (TDDB), stress-induced leakage current (SILC), carrier trapping, and interface characteristics are also reported. High quality field-effect transistors have been made of the N/O stack, and their properties will be reported.
引用
收藏
页码:362 / 368
页数:7
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